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From: Hammy on 12 Jul 2010 08:38
On Mon, 12 Jul 2010 13:01:03 +0100, "ian field"
<gangprobing.alien(a)ntlworld.com> wrote:


>Couldn't see much mention in the OP's posts about the application - if its a
>direct off line switcher, MOSFETs can be cascoded for a speed advantage.

It's for a 275W boost pfc. The question was more general though. I
dont need single digit nano-second transtions. I just wanted to check
if the switching times in fet datasheets were the max the devices
could obtain. As I said earlier I never used to even look at them
until recently and estimated switching times solely on driver
sink/source and total Q for my Vds.

>The bottom MOSFET should be a high current, low voltage ultra fast device,
>this makes the upper MOSFET less critical in a number of criteria.
>
Yea I gues if your trying to thump around a 2-300nC fet it might be
worth it. They make hybrid bjts with an integrated FET that works on
the same principal called Emitter switched bipolars.
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