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From: Richard Torrens (News) on 31 May 2010 12:55
In article
<7b9005d3-5d73-451e-a739-538f864b08ba(a)30g2000yqi.googlegroups.com>,
Tim Williams <tmoranwms(a)gmail.com> wrote:
> Neet. I increased the gate resistors on a half bridge MOSFET
> inverter, and switching loss dropped significantly.

Increased gate resistor = reduced gate clamping.

Makes the MOSFET more sensitive to dV/dt failure.

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